? semiconductor components industries, llc, 2009 august, 2009 ? rev. 4 1 publication order number: mmbt5087lt1/d mmbt5087lt1g low noise transistor pnp silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 50 vdc collector ? base voltage v cbo ? 50 vdc emitter ? base voltage v ebo ? 3.0 vdc collector current ? continuous i c ? 50 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://onsemi.com sot ? 23 (to ? 236) case 318 style 6 device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. mmbt5087lt1g sot ? 23 (pb ? free) 3,000 / tape & reel 1 2 3 MMBT5087LT3G sot ? 23 (pb ? free) 10,000/tape & reel *date code orientation and/or overbar may vary depending upon manufacturing location. 1 2q m 2q = device code m = date code* = pb ? free package (note: microdot may be in either location) marking diagram collector 3 1 base 2 emitter
mmbt5087lt1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 50 ? vdc collector ? base breakdown voltage (i c = ? 100 adc, i e = 0) v (br)cbo ? 50 ? vdc collector cutoff current (v cb = ? 10 vdc, i e = 0) (v cb = ? 35 vdc, i e = 0) i cbo ? ? ? 10 ? 50 nadc on characteristics dc current gain (i c = ? 100 adc, v ce = ? 5.0 vdc) (i c = ? 1.0 madc, v ce = ? 5.0 vdc) (i c = ? 10 madc, v ce = ? 5.0 vdc) h fe 250 250 250 800 ? ? ? collector ? emitter saturation voltage (i c = ? 10 madc, i b = ? 1.0 madc) v ce(sat) ? ? 0.3 vdc base ? emitter saturation voltage (i c = ? 10 madc, i b = ? 1.0 madc) v be(sat) ? 0.85 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = ? 500 adc, v ce = ? 5.0 vdc, f = 20 mhz) f t 40 ? mhz output capacitance (v cb = ? 5.0 vdc, i e = 0, f = 1.0 mhz) c obo ? 4.0 pf small ? signal current gain (i c = ? 1.0 madc, v ce = ? 5.0 vdc, f = 1.0 khz) h fe 250 900 ? noise figure (i c = ? 20 madc, v ce = ? 5.0 vdc, r s = 10 k , f = 1.0 khz) (i c = ? 100 adc, v ce = ? 5.0 vdc, r s = 3.0 k , f = 1.0 khz) nf ? ? 2.0 2.0 db typical noise characteristics (v ce = ? 5.0 vdc, t a = 25 c) figure 1. noise voltage f, frequency (hz) 5.0 7.0 10 3.0 figure 2. noise current f, frequency (hz) 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.1 bandwidth = 1.0 hz r s 0 i c = 10 a 100 a e n , noise voltage (nv) i n , noise current (pa) 30 a bandwidth = 1.0 hz r s ? i c = 1.0 ma 300 a 100 a 30 a 10 a 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2.0 1.0 ma 0.2 300 a
mmbt5087lt1g http://onsemi.com 3 noise figure contours (v ce = ? 5.0 vdc, t a = 25 c) 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m figure 3. narrow band, 100 hz i c , collector current ( a) figure 4. narrow band, 1.0 khz i c , collector current ( a) 10 0.5 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 5. wideband i c , collector current ( a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the t ransistor referred to the input. (figure 3) = noise current of the transistor referred to the input. (figure 4) = boltzman?s constant (1.38 x 10 ? 23 j/ k) = temperature of the source resistance ( k) = source resistance (ohms) e n i n k t r s 1.0 db 2.0 db 3.0 db 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 20 30 50 70 100 200 300 500 700 1.0k bandwidth = 1.0 hz 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db
mmbt5087lt1g http://onsemi.com 4 typical static characteristics figure 6. collector saturation region i c , collector current (ma) 1.4 figure 7. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 figure 8. ?on? voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts) 0.002 t a = 25 c i c = 1.0 ma 10 ma 100 ma figure 9. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 s duty cycle 2.0% i b = 400 a 350 a 300 a 250 a 200 a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40 1.2 1.0 0.8 0.6 0.4 0.2 0 2.4 0.8 0 1.6 0.8 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 v , temperature coefficients (mv/ c) 150 a 100 a 50 a
mmbt5087lt1g http://onsemi.com 5 typical dynamic characteristics c, capacitance (pf) figure 10. turn ? on time i c , collector current (ma) 500 figure 11. turn ? off time i c , collector current (ma) 2.0 5.0 10 20 30 50 1000 figure 12. current ? gain ? bandwidth product i c , collector current (ma) figure 13. capacitance v r , reverse voltage (volts) 3.0 1.0 500 0.5 10 t, time (ns) t, time (ns) f, current-gain bandwidth product (mhz) t 5.0 7.0 10 20 30 50 70 100 300 7.0 70 100 v cc = 3.0 v i c /i b = 10 t j = 25 c t d @ v be(off) = 0.5 v t r 10 20 30 50 70 100 200 300 500 700 - 2.0 -1.0 v cc = - 3.0 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 t j = 25 c v ce = 20 v 5.0 v 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 c ib c ob 200 - 3.0 - 5.0 - 7.0 - 20 -10 - 30 - 50 - 70 -100 t j = 25 c
mmbt5087lt1g http://onsemi.com 6 figure 14. thermal response t, time (ms) 1.0 0.01 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an569/d) z ja(t) = r(t) ? r ja t j(pk) ? t a = p (pk) z ja(t) t 1 t 2 p (pk) figure 16 t j , junction temperature ( c) 10 4 -4 0 i c , collector current (na) figure 15. typical collector leakage current design note: use of thermal response data a train of periodical power pulses can be represented by the model as shown in figure 16. using the model and the device thermal response the normalized effective transient thermal resistance of figure 14 was calculated for various duty cycles. to find z ja(t) , multiply the value obtained from figure 14 by the steady state value r ja . example: dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms (d = 0.2) using figure 14 at a pulse width of 1.0 ms and d = 0.2, the reading of r(t) is 0.22. the peak rise in junction temperature is therefore t = r(t) x p (pk) x r ja = 0.22 x 2.0 x 200 = 88 c. for more information, see on semiconductor application note an569/d, available from the literature distribution center or on our website at www.onsemi.com . 10 -2 10 -1 10 0 10 1 10 2 10 3 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 v cc = 30 v i ceo i cbo and i cex @ v be(off) = 3.0 v
mmbt5087lt1g http://onsemi.com 7 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 6: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmbt5087lt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
